FC8130 datasheet(8/16 Pages) FS

8 / 16 page

2015. 4. 23

8/16

Revision No : 0

FC8130

IEN

EN Input Bias Current

EN=GND or VIN

0.1

µA

Note 1: Absolute Maximum ratings indicate limits beyond which damage may occur. Electrical specifications do not

apply when operating the device outside of its rated operating conditions.

Note 2: All voltages are with respect to the potential at the ground pin.

Note 3: θJA is measured in the natural convection at TA=25℃ on a high effective thermal conductivity test board

(2 layers, 2S0P).

Note 4: θJC represents the resistance to the heat flows the chip to package top case

Note 5: Dropout voltage is measured by reducing VIN until VOUT drops 100mV from its nominal value at V N -VOUT = 1V.

Note 6: Maximum Power dissipation for the device is calculated using the following equations:

J(MAX)

P =

Where TJ(MAX) is the maximum junction temperature, TA is the ambient temperature, and θJA is the

junction -to-ambient thermal resistance. E.g. for the SOT-23-5 packageθJA = 152°C/W, TJ (MAX) = 150°C and

using TA= 25°C, the maximum power dissipation is found to be 0.82W. The derating factor (-1/θJA) =

-6.6mW/°C, thus below 25°C the power dissipation figure can be increased by 6.6mW per degree, and

similarity decreased by this factor for temperatures above 25°C.

Note 7: Typical values represent the most likely parametric norm.

FC8130 Datasheet(PDF) 8 Page - First Silicon Co., Ltd