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TMCS1101 Datasheet(PDF) 7 Page - Texas Instruments |
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TMCS1101 Datasheet(HTML) 7 Page - Texas Instruments |
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7 / 31 page  7 TMCS1101 www.ti.com SBOS825 – SEPTEMBER 2019 Product Folder Links: TMCS1101 Submit Documentation Feedback Copyright © 2019, Texas Instruments Incorporated Electrical Characteristics (continued) at TA = 25°C, VS = 5 V, PARAMETERS TEST CONDITIONS MIN TYP MAX UNIT (2) Thermally limited by junction temperature. Applies when device mounted on TMCS1101EVM. For more details, see the Safe Operating Area section. (3) Refer to the Transient Response section for details of frequency response of the device. Offset error drift, RTI(1) TMCS1101A1B, TA= –40ºC to +125ºC ±86 µA/°C TMCS1101A2B, TA= –40ºC to +125ºC ±44 µA/°C TMCS1101A3B, TA= –40ºC to +125ºC ±35 µA/°C TMCS1101A4B, TA= –40ºC to +125ºC ±30 µA/°C TMCS1101A1U, TA= –40ºC to +125ºC ±60 µA/°C TMCS1101A2U, TA= –40ºC to +125ºC ±36 µA/°C TMCS1101A3U, TA= –40ºC to +125ºC ±29 µA/°C TMCS1101A4U, TA= –40ºC to +125ºC ±20 µA/°C Nonlinearity error VOUT = 0.5 V to VS – 0.5 V ±0.1% CMTI Common mode transient immunity 25 kV/µs CMRR Common mode rejection ratio, RTI(1) 0.1 uA/V Zero current VOUT TMCS1101A<1-4>U 0.1*VS V/V Zero current VOUT TMCS1101A<1-4>B 0.5*VS V/V Noise density, RTI(1) TMCS1101A1B 380 μA/√Hz TMCS1101A2B 330 μA/√Hz TMCS1101A3B 300 μA/√Hz TMCS1101A4B 225 μA/√Hz TMCS1101A1U 380 μA/√Hz TMCS1101A2U 330 μA/√Hz TMCS1101A3U 300 μA/√Hz TMCS1101A4U 225 μA/√Hz INPUT RIN Input conductor resistance IN+ to IN– 1.8 m Ω Input conductor resistance drift TA= –40ºC to +125ºC 7 μΩ/°C G Magnetic coupling factor TA= 25ºC 1.2 mT/A IIN Maximum continuous RMS current (2) TA= 25ºC 30 A IIN Maximum continuous RMS current (2) TA= 85ºC 25 A IIN Maximum continuous RMS current (2) TA= 105ºC 22.5 A IIN Maximum continuous RMS current (2) TA= 125ºC 16 A NC (Pin 6) input impedance Over allowable range, GND < VNC < VS 1 M Ω VOLTAGE OUTPUT ZOUT Closed loop output impedance f = 1 Hz to 1 kHz 0.2 Ω f = 10 kHz 2 Ω Maximum capacitive load No sustained oscillation 1 nF Short circuit output current VOUT short to ground, short to VS 90 mA Swing to VS power-supply rail RL = 10 kΩ to GND, TA= –40ºC to +125ºC VS – 0.02 VS – 0.1 V Swing to GND RL = 10 kΩ to GND, TA= –40ºC to +125ºC 5 10 mV FREQUENCY RESPONSE BW Bandwidth(3) –3-dB Bandwidth 80 kHz Nyquist Frequency(3) 125 kHz SR Slew rate Slew rate of output amplifier during single transient step. 1.5 V/µs tr Response time Time between the input current step reaching 90% of final value to the sensor output reaching 90% of its final value, for a 1V output transition. 6.5 µs tp Propagation delay Time between the input current step reaching 10% of final value to the sensor output reaching 10% of its final value, for a 1V output transition. 4 µs |
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