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ZSSC4151 Datasheet(PDF) 9 Page - Renesas Technology Corp |
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ZSSC4151 Datasheet(HTML) 9 Page - Renesas Technology Corp |
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9 / 14 page ![]() ZSSC4151 Datasheet © 2016 Integrated Device Technology, Inc. 9 April 20, 2016 No. Parameter Symbol Conditions Min Typ Max Unit 2.4.3. Nonvolatile Memory (NVM) 2.4.3.1 Junction temperature for NVM programming 2) TAMB_NVM -40 150 C 2.4.3.2 Re-write cycles 1) NNVM_TQA For TTQA (see range in specification 2.2.2) 100 2.4.3.3 Re-write cycles at 150°C NNVM_TQE For TTQE (see range in specification 2.2.2) 10 2.4.3.4 Data retention 1) tNVM_RET Temperature profile: 22h bake at 250 C 15 Year 2.4.3.5 Programming time 1) tNVM_WRI Per written word 2.2 5 ms 1) No measurement in mass production; parameter is guaranteed by design and/or quality observation. 2) Valid for dice. Note: Additional package and temperature range cause restrictions. |
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