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ATMEGA640 Datasheet(PDF) 367 Page - Microchip Technology |
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ATMEGA640 Datasheet(HTML) 367 Page - Microchip Technology |
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367 / 436 page ![]() 367 ATmega640/V-1280/V-1281/V-2560/V-2561/V [DATASHEET] DS40002211A Note: Values are guidelines only. 31.9 External Data Memory Timing Notes: 1. This assumes 50% clock duty cycle. The half period is actually the high time of the external clock, XTAL1. Conversion Time 65 260 µs AVCC Analog Supply Voltage VCC - 0.3 VCC + 0.3 V VREF Reference Voltage 2.7 AVCC - 0.5 VIN Input Voltage GND VCC VDIFF Input Differential Voltage -VREF/Gain VREF/Gain ADC Conversion Output -511 511 LSB Input Bandwidth 4kHz VINT Internal Voltage Reference 2.3 2.56 2.8 V RREF Reference Input Resistance 32 k RAIN Analog Input Resistance 100 M Table 31-11. External Data Memory Characteristics, 4.5 to 5.5 Volts, No Wait-state Symbol Parameter 8MHz Oscillator Variable Oscillator Unit Min. Max. Min. Max. 01/tCLCL Oscillator Frequency 0.0 16 MHz 1tLHLL ALE Pulse Width 115 1.0tCLCL-10 ns 2tAVLL Address Valid A to ALE Low 57.5 0.5tCLCL-5 (1) 3a tLLAX_ST Address Hold After ALE Low, write access 55 3b tLLAX_LD Address Hold after ALE Low, read access 55 4tAVLLC Address Valid C to ALE Low 57.5 0.5tCLCL-5(1) 5tAVRL Address Valid to RD Low 115 1.0tCLCL-10 6tAVWL Address Valid to WR Low 115 1.0tCLCL-10 7tLLWL ALE Low to WR Low 47.5 67.5 0.5tCLCL-15(2) 0.5tCLCL+5(2) 8tLLRL ALE Low to RD Low 47.5 67.5 0.5tCLCL-15 (2) 0.5tCLCL+5 (2) 9tDVRH Data Setup to RD High 40 40 10 tRLDV Read Low to Data Valid 75 1.0tCLCL-50 11 tRHDX Data Hold After RD High 0 0 12 tRLRH RD Pulse Width 115 1.0tCLCL-10 13 tDVWL Data Setup to WR Low 42.5 0.5tCLCL-20(1) 14 tWHDX Data Hold After WR High 115 1.0tCLCL-10 15 tDVWH Data Valid to WR High 125 1.0tCLCL 16 tWLWH WR Pulse Width 115 1.0tCLCL-10 Table 31-10. ADC Characteristics, Differential Channels (Continued) Symbol Parameter Condition Min. (1) Typ. (1) Max. (1) Unit s |
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