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LT8640 Datasheet(PDF) 3 Page - Analog Devices |
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LT8640 Datasheet(HTML) 3 Page - Analog Devices |
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3 / 22 page  LT8644S 3 Rev. 0 For more information www.analog.com ELECTRICAL CHARACTERISTICS Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. Note 2: The LT8644SI is guaranteed over the full –40°C to 125°C operating junction temperature range. The junction temperature (TJ, in °C) is calculated from the ambient temperature (TA in °C) and power dissipation (PD, in Watts) according to the formula: TJ = TA + (PD • θJA) where θJA (in °C/W) is the package thermal impedance. The l denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. PARAMETER CONDITIONS MIN TYP MAX UNITS Feedback Voltage Line Regulation VIN = 3.0V to 8V l 0.025 0.12 %/V Feedback Pin Input Current VFB = 0.6V –20 20 nA Error Amplifier Transconductance VC = 1.25V 1.1 1.45 1.8 mS Error Amp Gain 650 VC Source Current VFB = 0.4V, VC = 1.25V 320 µA VC Sink Current VFB = 0.8V, VC = 1.25V 320 µA VC Pin to Switch Current Gain 18 A/V VC Clamp Voltage 2.3 V SVIN Pin Current Consumption SVIN = 5V, fSW = 2MHz 20 mA Minimum On-Time ILOAD = 4A, SYNC = 2V l 20 35 ns Minimum Off-Time 75 100 ns Oscillator Frequency RT = 147k RT = 38.3k RT = 16.9k l l l 260 0.95 1.95 300 1 2 340 1.05 2.05 kHz MHz MHz Top Power NMOS On-Resistance 12 mΩ Bottom Power NMOS On-Resistance VINTVCC = 3.6V 4.3 mΩ Top Power NMOS Current Limit l 25 30 33 A Bottom Power NMOS Current Limit VINTVCC = 3.6V 15.5 21 26.5 A SW Leakage Current VIN = 8V, VSW = 0V, 8V –10 10 µA EN/UV Pin Threshold EN/UV Rising l 0.93 0.98 1.03 V EN/UV Pin Hysteresis 40 mV EN/UV Pin Current VEN/UV = 2V –20 20 nA PG Upper Threshold Offset from VFB VFB Rising l 6.25 7.75 9.25 % PG Lower Threshold Offset from VFB VFB Falling l –9.25 –7.75 –6.25 % PG Hysteresis 0.4 % PG Leakage VPG = 3.3V –40 40 nA PG Pull-Down Resistance VPG = 0.1V l 600 2000 Ω SYNC/MODE Threshold SYNC/MODE DC and Clock Low Level Voltage SYNC/MODE Clock High Level Voltage SYNC/MODE DC High Level Voltage l l l 0.5 VINTVCC – 1.1 1.5 VINTVCC – 0.5 V V V Spread Spectrum Modulation Frequency Range RT = 38.3k, VSYNC = 3.3V 25 % Spread Spectrum Modulation Frequency VSYNC = 3.3V 3 kHz SS Source Current l 1.3 2.0 2.7 µA SS Pull-Down Resistance Fault Condition, SS = 0.1V 200 Ω PHMODE Thresholds Between 180° and 120° Between 120° and 90° 0.7 VINTVCC – 1.3 1.4 VINTVCC – 0.6 V V Note 3: θ values determined per JEDEC 51-7, 51-12. See the Applications Information section for information on improving the thermal resistance and for actual temperature measurements of a demo board in typical operating conditions. Note 4: This IC includes overtemperature protection that is intended to protect the device during overload conditions. Junction temperature will exceed 150°C when overtemperature protection is active. Continuous operation above the specified maximum operating junction temperature will reduce lifetime. |
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