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BGU8821 Datasheet(PDF) 2 Page - NXP Semiconductors |
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BGU8821 Datasheet(HTML) 2 Page - NXP Semiconductors |
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2 / 41 page ![]() NXP Semiconductors BGU8821/A Dual channel low-noise high linearity amplifier with DSA and SPDT BGU8821/A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2020. All rights reserved. Product data sheet Rev. 6 — 15 April 2020 2 / 41 3 Applications • Wireless infrastructure • 5G ready • Low noise and high linearity applications • LTE, W-CDMA, CDMA, GSM • General-purpose wireless applications • TDD or FDD systems • Suitable for small cells 4 Quick reference data Table 1. Quick reference data BGU8821/A LNA1 f = 900 MHz; VCC = 5 V; Tamb = 25 °C; input and output 50 Ω; unless otherwise specified. All RF parameters are measured in an application board as shown in Figure 44 with components listed in Table 33 optimized for f = 900 MHz. Symbol Parameter Conditions Min Typ Max Unit LNA1 enable - 54 64 mA ICC supply current Disable - 3 - mA Gp power gain [1] 15.9 19 - dB NF noise figure [1] - 0.6 - dB PL(1dB) output power at 1 dB gain compression [1] 17.9 21 - dBm IP3O output third-order intercept point 2-tone; tone spacing = 1 MHz; Pi = -15 dBm per tone [1] 34 38 - dBm [1] Connector and Printed-Circuit Board (PCB) losses have been de-embedded for all RF parameters. Table 2. Quick reference data BGU8821/A DSA+LNA2 f = 900 MHz; VCC = 5 V; Tamb = 25 °C; input and output 50 Ω; unless otherwise specified. All RF parameters are measured in an application board as shown in Figure 44 with components listed in Table 33 optimized for f = 900 MHz Symbol Parameter Conditions Min Typ Max Unit LNA2 enable - 57 67 mA ICC supply current Disable - 5 - mA Gp power gain [1] 14.5 18 - dB NF noise figure [1] - 1.6 - dB PL(1dB) output power at 1 dB gain compression [1] 18.0 22 - dBm IP3O output third-order intercept point 2-tone; tone spacing = 1 MHz; Pi = -15 dBm per tone [1] 34 39 - dBm [1] Connector and Printed-Circuit Board (PCB) losses have been de-embedded for all RF parameters. |
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