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ADC083000 Datasheet(PDF) 10 Page - National Semiconductor (TI) |
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ADC083000 Datasheet(HTML) 10 Page - National Semiconductor (TI) |
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10 / 33 page ![]() Converter Electrical Characteristics (Continued) NOTE: This product is currently in development and the parameters specified in this section are DESIGN TARGETS. The specifications in this section cannot be guaranteed until device characterization has taken place. The following specifications apply after calibration for V A =VDR = +1.9VDC, OutV = 1.9V, VIN FSR (a.c. coupled) = differential 870mVP-P,CL = 10 pF, Differential, a.c. coupled Sinewave Input Clock, f CLK = 1.5GHz at 0.5VP-P with 50% duty cycle, VBG = Floating, Non- Extended Control Mode, SDR Mode, R EXT = 3300 Ω ±0.1%, Analog Signal Source Impedance = 100Ω Differential. Boldface limits apply for T A =TMIN to TMAX. All other limits TA = 25˚C, unless otherwise noted. (Notes 6, 7) Symbol Parameter Conditions Typical (Note 8) Limits (Note 8) Units (Limits) ANALOG OUTPUT CHARACTERISTICS C LOAD V CMO Maximum V CMO load Capacitance 80 pF V BG Bandgap Reference Output Voltage I BG = ±100 µA 1.26 1.20 1.33 V (min) V (max) TC V BG Bandgap Reference Voltage Temperature Coefficient T A = −40˚C to +85˚C, I BG = ±100 µA 28 ppm/˚C C LOAD V BG Maximum Bandgap Reference load Capacitance 80 pF TEMPERATURE DIODE CHARACTERISTICS ∆V BE Temperature Diode Voltage 192 µA vs. 12 µA, T J = 25˚C 71.23 mV 192 µA vs. 12 µA, T J = 85˚C 85.54 mV CLOCK INPUT CHARACTERISTICS V ID Differential Clock Input Level Sine Wave Clock 0.6 0.4 2.0 V P-P (min) V P-P (max) Square Wave Clock 0.6 0.4 2.0 V P-P (min) V P-P (max) I I Input Current V IN =0orVIN =VA ±1µA C IN Input Capacitance (Notes 10, 11) Differential 0.02 pF Each input to ground 1.5 pF DIGITAL CONTROL PIN CHARACTERISTICS V IH Logic High Input Voltage (Note 12) 0.85 x V A V (min) V IL Logic Low Input Voltage (Note 12) 0.15 x V A V (max) C IN Input Capacitance (Notes 11, 13) Each input to ground 1.2 pF DIGITAL OUTPUT CHARACTERISTICS V OD LVDS Differential Output Voltage Measured differentially, OutV = V A, V BG = Floating (Note 15) 710 400 mV P-P (min) 920 mV P-P (max) Measured differentially, OutV = GND, V BG = Floating (Note 15) 510 280 mV P-P (min) 720 mV P-P (max) ∆ V O DIFF Change in LVDS Output Swing Between Logic Levels ±1mV V OS Output Offset Voltage, see Figure 1 V BG = Floating 800 mV V OS Output Offset Voltage, see Figure 1 V BG =VA (Note 15) 1200 mV ∆ V OS Output Offset Voltage Change Between Logic Levels ±1mV I OS Output Short Circuit Current Output+ & Output- connected to 0.8V ±4mA Z O Differential Output Impedance 100 Ohms www.national.com 10 |
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