STGWA80H65DFBAG datasheet(5/14 Pages) STMICROELECTRONICS

Part #	STGWA80H65DFBAG

Description	Automotive-grade trench gate field-stop 650 V, 80 A high speed HB series IGBT in a TO-247 long leads

PDF	14 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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5 / 14 page

2.1

Electrical characteristics (curves)

Figure 1. Total power dissipation vs temperature

GADG211120221158PDT

500

400

300

200

100

125

175

PTOT

(W)

TC (°C)

VGE ≥ 15 V, TJ ≤ 175 °C

Figure 2. Collector current vs temperature

GADG211120221159CCT

150

120

125

175

(A)

TC (°C)

VGE ≥ 15 V, TJ ≤ 175 °C

Figure 3. Typical output characteristics (TJ = 25 °C)

GADG211120221159OC25

250

200

150

100

(A)

VCE (V)

7 V

9 V

11 V

13 V

VGE = 15 V

Figure 4. Typical output characteristics (TJ = 175 °C)

GADG211120221200OC175

250

200

150

100

(A)

VCE (V)

7 V

11 V

9 V

13 V

VGE = 15 V

Figure 5. Typical VCE(sat) vs temperature

GADG211120221201VCET

2.0

1.8

1.6

1.4

1.2

1.0

-75

-25

125

175

VCE(sat)

(V)

TJ (°C)

IC = 80 A

IC = 40 A

VGE=15 V

Figure 6. Typical VCE(sat) vs collector current

GADG211120221201VCEC

3.0

2.5

2.0

1.5

1.0

0.5

0.0

100

150

200

250

VCE(sat)

(V)

IC (A)

TJ= -55 °C

TJ= 25 °C

TJ= 175 °C

VGE =15 V

STGWA80H65DFBAG

Electrical characteristics (curves)

DS14160 - Rev 1

page 5/14

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