STGWA80H65DFBAG datasheet(6/14 Pages) STMICROELECTRONICS

Part #	STGWA80H65DFBAG

Description	Automotive-grade trench gate field-stop 650 V, 80 A high speed HB series IGBT in a TO-247 long leads

PDF	14 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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6 / 14 page

Figure 7. Forward bias safe operating area

GADG211120221204FSOA

10 2

10 1

10 0

10 1

10 2

(A)

VCE (V)

tp= 1 µs

tp= 10 µs

tp= 100 µs

tp= 1 ms

Single pulse, TC = 25 °C,

TJ ≤ 175 °C, VGE = 15 V

ICP

VCE(sat) limit

V(BR)CES

Figure 8. Collector current vs switching frequency

GADG211120221301CCS

160

120

10 0

10 1

10 2

(A)

f (kHz)

TC= 80 °C

TC= 100 °C

Rectangular current shape (duty cycle = 0.5,

VGE= 0 to 15 V , Tj = 175 °C

VCC= 400 V, RG = 10 Ω,

Figure 9. Typical transfer characteristics

GADG211120221205TCH

250

200

150

100

(A)

VGE (V)

TJ= 25 °C

TJ= 175 °C

VCE=5 V

Figure 10. Typical diode VF vs forward current

GADG211120221205DVF

3.0

2.5

2.0

1.5

1.0

0.5

0.0

100

150

200

250

(V)

IF (A)

TJ= 175 °C

TJ= -55 °C

TJ= 25 °C

Figure 11. Normalized VGE(th) vs temperature

GADG211120221211NVGE

1.2

1.0

0.8

0.6

0.4

-75

-25

125

175

VGE(th)

(Norm.)

TJ (°C)

IC = 1 mA

VGE = VCE

Figure 12. Normalized V(BR)CES vs temperature

GADG211120221211NVBR

1.1

1.0

0.9

0.8

-75

-25

125

175

V(BR)CES

(Norm.)

TJ (°C)

IC = 1 mA

STGWA80H65DFBAG

Electrical characteristics (curves)

DS14160 - Rev 1

page 6/14

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