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STGWA80H65DFBAG Datasheet(PDF) 8 Page - STMicroelectronics

Part # STGWA80H65DFBAG
Description  Automotive-grade trench gate field-stop 650 V, 80 A high speed HB series IGBT in a TO-247 long leads
PDF  14 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGWA80H65DFBAG Datasheet(HTML) 8 Page - STMicroelectronics

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Figure 19. Typical switching times vs collector current
GADG231120221309STC
10 2
10 1
0
20
40
60
80
t
(ns)
IC (A)
tf
td(off)
tr(i)
VCC = 400 V, VGE = 15 V, RG = 10 Ω,
TJ = 175
℃
td(on)
Figure 20. Typical switching times vs gate resistance
GADG231120221316STR
10 3
10 2
10 1
0
10
20
30
40
t
(ns)
RG (Ω)
td(off)
VCC = 400 V, VGE = 15 V, IC = 80 A,
TJ = 175
℃
td(on)
tr(i)
tf
Figure 21. Typical reverse recovery current vs diode
current slope
GADG211120221232RRC
51
50
49
48
47
46
800
1400
2000
2600
Irrm
(A)
di/dt (A/µs)
8
Figure 22. Typical reverse recovery time vs diode current
slope
GADG211120221232RRT
130
120
110
100
90
80
800
1200 1600 2000 2400 2800
trr
(ns)
di/dt (A/µs)
8
Figure 23. Typical reverse recovery charge vs diode
current slope
GADG211120221233RRQ
3.9
3.8
3.7
3.6
800
1400
2000
2600
Qrr
(µC)
di/dt (A/µs)
8
Figure 24. Typical reverse recovery energy vs diode
current slope
GADG211120221234RRE
700
650
600
550
800
1400
2000
2600
Err
(mJ)
di/dt (A/µs)
8
STGWA80H65DFBAG
Electrical characteristics (curves)
DS14160 - Rev 1
page 8/14



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