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STGWA80H65DFBAG Datasheet(PDF) 4 Page - STMicroelectronics

Part # STGWA80H65DFBAG
Description  Automotive-grade trench gate field-stop 650 V, 80 A high speed HB series IGBT in a TO-247 long leads
PDF  14 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGWA80H65DFBAG Datasheet(HTML) 4 Page - STMicroelectronics

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Table 5. Switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(off)
Turn-off delay time
VCC = 400 V, IC = 80 A,
VGE = 15 V, RG = 10 Ω
-
360
-
ns
tr
Current rise time
-
84
-
ns
di/dt(on)
Turn-on current slope
-
720
-
A/μs
Eon (1)
Turn-on switching energy
-
3.26
-
mJ
td(off)
Turn-off delay time
-
360
-
ns
tf
Current fall time
-
66
-
ns
Eoff (2)
Turn-off switching energy
-
2.33
-
mJ
Ets
Total switching energy
-
5.59
-
mJ
td(off)
Turn-off delay time
VCC = 400 V, IC = 80 A,
VGE = 15 V, RG = 10 Ω, TJ = 175 °C
-
375
-
ns
tr
Current rise time
-
90
-
ns
di/dt(on)
Turn-on current slope
-
690
-
A/μs
Eon(1)
Turn-on switching energy
-
5.24
-
mJ
td(off)
Turn-off delay time
-
375
-
ns
tf
Current fall time
-
65
-
ns
Eoff (2)
Turn-off switching energy
-
2.56
-
mJ
Ets
Total switching energy
-
7.8
-
mJ
1. Including the reverse recovery of the diode.
2. Including the tail of the collector current.
Table 6. Diode switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
trr
Reverse recovery time
IF = 80 A, VR = 400 V,
VGE = 15 V, di/dt = 1000 A/μs
-
64
-
ns
Qrr
Reverse recovery charge
-
0.7
-
μC
Irrm
Reverse recovery current
-
15
-
A
Err
Reverse recovery energy
-
92
-
μJ
trr
Reverse recovery time
IF = 80 A, VR = 400 V,
VGE = 15 V, di/dt = 1000 A/μs,
TJ = 175 °C
-
120
-
ns
Qrr
Reverse recovery charge
-
3.7
-
μC
Irrm
Reverse recovery current
-
47
-
A
Err
Reverse recovery energy
-
595
-
μJ
STGWA80H65DFBAG
Electrical characteristics
DS14160 - Rev 1
page 4/14



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