TO-247 long leads

C(2, TAB)

E(3)

G(1)

G1C2TE3_diode

Features

•

AEC-Q101 qualified

•

High-speed switching series

•

Maximum junction temperature: TJ = 175 °C

•

Low VCE(sat) = 1.65 V (typ.) @ IC = 80 A

•

Minimized tail current

•

Tight parameter distribution

•

Positive temperature VCE(sat) coefficient

•

Soft and very fast recovery antiparallel diode

Applications

•

PFC

•

High frequency converters

Description

This device is an IGBT developed using an advanced proprietary trench gate field-

stop structure. The device is part of the new HB series of IGBTs, which represents

an optimum compromise between conduction and switching loss to maximize the

efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat)

temperature coefficient and very tight parameter distribution result in safer paralleling

operation.

Product status link

STGWA80H65DFBAG

Product summary

Order code

STGWA80H65DFBAG

Marking

G80H65DFBAG

Package

TO-247 long leads

Packing

Tube

Automotive-grade trench gate field-stop 650 V, 80 A high speed HB series IGBT

in a TO-247 long leads

STGWA80H65DFBAG

Datasheet

DS14160 - Rev 1 - December 2022

For further information contact your local STMicroelectronics sales office.

www.st.com