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STGWA80H65DFBAG Datasheet(PDF) 7 Page - STMicroelectronics

Part # STGWA80H65DFBAG
Description  Automotive-grade trench gate field-stop 650 V, 80 A high speed HB series IGBT in a TO-247 long leads
PDF  14 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGWA80H65DFBAG Datasheet(HTML) 7 Page - STMicroelectronics

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Figure 13. Typical capacitance characteristics
GADG211120221212CVR
10 4
10 3
10 2
10 1
10-1
100
101
102
C
(pF)
VCE (V)
Cies
Coes
Cres
f = 1 MHz
Figure 14. Typical gate charge characteristics
GADG211120221218GCGE
16
12
8
4
0
0
100
200
300
400
500
VGE
(V)
Qg (nC)
VCC = 520 V, IC = 80 A, IG = 8 mA
Figure 15. Typical switching energy vs collector current
GADG211120221218SLC
5
4
3
2
1
0
0
20
40
60
80
E
(mJ)
IC (A)
VCC = 400 V, RG = 10 Ω,
VGE = 15 V, TJ=175
℃
Eon
Eoff
Figure 16. Typical switching energy vs temperature
GADG211120221219SLT
6
5
4
3
2
1
0
-25
25
75
125
175
E
(mJ)
TJ (°C)
VCC = 400 V, RG = 10 Ω,
VGE = 15 V, IC = 80 A
Eon
Eoff
Figure 17. Typical switching energy vs collector emitter
voltage
GADG211120221251SLV
7
6
5
4
3
2
1
0
100
200
300
400
500
E
(mJ)
VCE (V)
RG= 10 Ω, VGE = 15 V
IC = 80 A,TJ=175
℃
Eon
Eoff
Figure 18. Typical switching energy vs RG
GADG211120221230SLG
8
6
4
2
0
0
10
20
30
40
E
(mJ)
RG (Ω)
VCC = 400 V, VGE = 15 V, IC = 80 A,
TJ = 175
℃
Eon
Eoff
STGWA80H65DFBAG
Electrical characteristics (curves)
DS14160 - Rev 1
page 7/14



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