6.42

4

71124 CMOS Static RAM

1 Meg (128K x 8-bit) Revolutionary Pinout

Commercial and Industrial Temperature Ranges

Feb.27.20

AC Electrical Characteristics

(VCC = 5.0V ± 10%, Commercial and Industrial Temperature Ranges)

71124S12(2)

71124S15

71124S20

Symbol

Parameter

Min.

Max.

Min.

Max.

Min.

Max.

Unit

READ CYCLE

tRC

Read Cycle Time

12

____

15

____

20

____

ns

tAA

Address Access Time

____

12

____

15

____

20

ns

tACS

Chip Select Access Time

____

12

____

15

____

20

ns

tCLZ(1)

Chip Select to Output in Low-Z

3

____

3

____

3

____

ns

tCHZ(1)

Chip Deselect to Output in High-Z

0

60708

ns

tOE

Output Enable to Output Valid

____

6

____

7

____

8ns

tOLZ(1)

Output Enable to Output in Low-Z

0

____

0

____

0

____

ns

tOHZ(1)

Output Disable to Output in High-Z

0

50507

ns

tOH

Output Hold from Address Change

4

____

4

____

4

____

ns

tPU(1)

Chip Select to Power-Up Time

0

____

0

____

0

____

ns

tPD(1)

Chip Deselect to Power-Down Time

____

12

____

15

____

20

ns

WRITE CYCLE

tWC

Write Cycle Time

12

____

15

____

20

____

ns

tAW

Address Valid to End of Write

8

____

12

____

15

____

ns

tCW

Chip Select to End of Write

8

____

12

____

15

____

ns

tAS

Address Set-up Time

0

____

0

____

0

____

ns

tWP

Write Pulse Width

8

____

12

____

15

____

ns

tWR

Write Recovery Time

0

____

0

____

0

____

ns

tDW

Data Valid to End-of-Write

6

____

8

____

9

____

ns

tDH

Data Hold Time

0

____

0

____

0

____

ns

tOW(1)

Output active from End-of-Write

3

____

3

____

4

____

ns

tWHZ(1)

Write Enable to Output in High-Z

0

50508

ns

3514 tbl 09

NOTES:

1. This parameter guaranteed with the AC load (Figure 2) by device characterization, but is not production tested.

2. There is no industrial temperature offering for the 12ns speed grade.