6.42

6

71124 CMOS Static RAM

1 Meg (128K x 8-bit) Revolutionary Pinout

Commercial and Industrial Temperature Ranges

Feb.27.20

Timing Waveform of Write Cycle No. 1 (WE Controlled Timing

)(1,2,4)

Timing Waveform of Write Cycle No. 2 (CS Controlled Timing)(1,4)

NOTES:

1. A write occurs during the overlap of a LOW CS and a LOW WE.

2. OEis continuously HIGH. During a WE controlled write cycle with OE LOW, tWP must be greater than or equal to tWHZ+ tDW to allow the I/O drivers to turn off and data to be placed

on the bus for the required tDW. If OE is HIGH during a WE controlled write cycle, this requirement does not apply and the minimum write pulse is the specified tWP.

3. During this period, I/O pins are in the output state, and input signals must not be applied.

4. If the CS LOW transition occurs simultaneously with or after the WE LOW transition, the outputs remain in a high impedance state. CS must be active during the tCW write period.

5. Transitionismeasured±200mVfromsteadystate.

ADDRESS

CS

WE

DATAOUT

DATAIN

3514 drw 07

(5)

(2)

(5)

(5)

DATAIN VALID

HIGH IMPEDANCE

tWC

tAW

tAS

tWHZ

tWP

tCHZ

tOW

tDW

tDH

tWR

(3)

(3)

.

CS

ADDRESS

DATAIN

3514 drw 08

tAW

tWC

tCW

tAS

tWR

tDW

tDH

DATAIN VALID

WE

.