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S71GS256 Datasheet(PDF) 131 Page - SPANSION |
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S71GS256 Datasheet(HTML) 131 Page - SPANSION |
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131 / 195 page  October 4, 2004 cellRAM_00_A0 CellularRAM Type 2 131 Ad vance Info rmat i o n Notes: 1. See “How Extended Timings Impact CellularRAM™ Operation” below. 2. Low-Z to High-Z timings are tested with the circuit shown in Figure 38. The High-Z timings measure a 100mV transition from either VOH or VOL toward VCCQ/2. 3. High-Z to Low-Z timings are tested with the circuit shown in Figure 38. The Low-Z timings measure a 100mV transition away from the High-Z (VCCQ/2) level toward either VOH or VOL. Table 33. Asynchronous WRITE Cycle Timing Requirements Parameter Symbol 70ns/80 MHz 85ns/66 MHz Units Notes Min Max Min Max Address and ADV# LOW Setup Time tAS 00 ns Address Hold from ADV# Going HIGH tAVH 55 ns Address Setup to ADV# Going HIGH tAVS 10 10 ns Address Valid to End of Write tAW 70 85 ns LB#/UB# Select to End of Write tBW 70 85 ns Maximum CE# Pulse Width tCEM 44 µs 1 CE# LOW to WAIT Valid tCEW 1 7.517.5 ns Async Address-to-Burst Transition Time tCKA 70 85 ns CE# Low to ADV# HIGH tCVS 10 10 ns Chip Enable to End of Write tCW 70 85 ns Data Hold from Write Time tDH 00 ns Data WRITE Setup Time tDW 23 23 ns 1 Chip Disable to WAIT High-Z Output tHZ 88 ns Chip Enable to Low-Z Output tLZ 10 10 ns 3 End WRITE to Low-Z Output tOW 55 ns 3 ADV# Pulse Width tVP 10 10 ns ADV# Pulse Width HIGH tVPH 10 10 ns ADV# Setup to End of WRITE tVS 70 85 ns WRITE Cycle Time tWC 70 85 ns WRITE to DQ High-Z Output tWHZ 88 ns 2 WRITE Pulse Width tWP 46 55 ns 1 WRITE Pulse Width HIGH tWPH 10 10 ns WRITE Recovery Time tWR 00 ns Table 34. Burst WRITE Cycle Timing Requirements Parameter Symbol 70ns/80 MHz 85ns/66 MHz Units Notes Min Max Min Max CE# HIGH between Subsequent Mixed-Mode Operations tCBPH 55 ns CE# LOW to WAIT Valid tCEW 1 7.517.5 ns |
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