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S71GS256 Datasheet(PDF) 127 Page - SPANSION |
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S71GS256 Datasheet(HTML) 127 Page - SPANSION |
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127 / 195 page ![]() October 4, 2004 cellRAM_00_A0 CellularRAM Type 2 127 Ad vance Info rmat i o n Note: IPAR (MAX) values measured with TCR set to 85°C. Table 28. Partial Array Refresh Specifications and Conditions Note:IPAR (MAX) values measured with TCR set to 85°C. Table 27. Temperature Compensated Refresh Specifications and Conditions Description Conditions Symbol Density Max Case Temperature Standard Power (No Desig.) Units Temperature Compensated Refresh Standby Current VIN = VCCQ or 0V, CE# = VCCQ ITCR 64 Mb +85 °C120 µA +70 °C105 +45 °C85 +15 °C70 32 Mb +85 °C110 +70 °C95 +45 °C80 +15 °C70 Description Conditions Symbol Density Array Partition Standard Power (No Desig.) Units Partially Array Refresh Standby Current VIN = VCCQ or 0V, CE# = VCCQ IPAR 64 Mb Full 120 µA 1/2 115 1/4 110 1/8 105 070 32 Mb Full 110 1/2 105 1/4 100 1/8 95 070 128 Mb Full 180 050 Table 29. Deep Power-Down Specifications Description Conditions Symbol Typ Units Deep Power-down VIN = VCCQ or 0V; +25°C; VCC = 1.8V IZZ 10 µA |
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