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S71GS256 Datasheet(PDF) 124 Page - SPANSION |
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S71GS256 Datasheet(HTML) 124 Page - SPANSION |
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124 / 195 page  124 CellularRAM Type 2 cellRAM_00_A0 October 4, 2004 Advan ce In form ati o n Deep Power-Down (RCR[4]): Default = DPD Disabled The deep power-down bit enables and disables all refresh-related activity. This mode is used if the system does not require the storage provided by the Cellular- RAM device. Any stored data will become corrupted when DPD is enabled. When refresh activity has been re-enabled, the CellularRAM device will require 150µs to perform an initialization procedure before normal operations can resume. Deep power-down is enabled when RCR[4] = 0, and remains enabled until RCR[4] is set to “1.” Temperature Compensated Refresh (RCR[6:5]): Default = +85ºC Operation The TCR bits allow for adequate refresh at four different temperature thresholds (+15ºC, +45ºC, +70ºC, and +85ºC). The setting selected must be for a temper- ature higher than the case temperature of the CellurlarRAM device. If the case temperature is +50ºC, the system can minimize self refresh current consumption by selecting the +70ºC setting. The +15ºC and +45ºC settings would result in inadequate refreshing and cause data corruption. Page Mode Operation (RCR[7]): Default = Disabled The page mode operation bit determines whether page mode is enabled for asyn- chronous READ operations. In the power-up default state, page mode is disabled. Table 24. 64Mb Address Patterns for PAR (RCR[4] = 1) RCR[2] RCR[1] RCR[0] ACTIVE SECTION ADDRESS SPACE SIZE DENSITY 0 0 0 Full die 000000h–3FFFFFh 4 Meg x 16 64Mb 0 0 1 One-half of die 000000h–2FFFFFh 3 Meg x 16 48Mb 0 1 0 One-quarter of die 000000h–1FFFFFh 2 Meg x 16 32Mb 0 1 1 One-eighth of die 000000h–0FFFFFh 1 Meg x 16 16Mb 1 0 0 None of die 0 0 Meg x 16 0Mb 1 0 1 One-half of die 100000h–3FFFFFh 3 Meg x 16 48Mb 1 1 0 One-quarter of die 200000h–3FFFFFh 2 Meg x 16 32Mb 1 1 1 One-eighth of die 300000h–3FFFFFh 1 Meg x 16 16Mb Table 25. 32Mb Address Patterns for PAR (RCR[4] = 1) RCR[2] RCR[1] RCR[0] ACTIVE SECTION ADDRESS SPACE SIZE DENSITY 0 0 0 Full die 000000h–1FFFFFh 2 Meg x 16 32Mb 0 0 1 One-half of die 000000h–17FFFFh 1.5 Meg x 16 24Mb 0 1 0 One-quarter of die 000000h–0FFFFFh 1 Meg x 16 16Mb 0 1 1 One-eighth of die 000000h–07FFFFh 512K x 16 8Mb 1 0 0 None of die 0 0 Meg x 16 0Mb 1 0 1 One-half of die 080000h–1FFFFFh 1.5 Meg x 16 24Mb 1 1 0 One-quarter of die 100000h–1FFFFFh 1 Meg x 16 16Mb 1 1 1 One-eighth of die 180000h–1FFFFFh 512K x 16 8Mb |
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