S71GS256 datasheet(122/195 Pages) SPANSION

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CellularRAM Type 2

cellRAM_00_A0 October 4, 2004

Advan ce

In form ati o n

Operating Mode (BCR[15]): Default = Asynchronous Operation

The operating mode bit selects either synchronous burst operation or the default

asynchronous mode of operation.

Refresh Configuration Register

The refresh configuration register (RCR) defines how the CellularRAM device per-

forms its transparent self refresh. Altering the refresh parameters can

dramatically reduce current consumption during standby mode. Page mode con-

trol is also embedded into the RCR. Table 22 below describes the control bits used

in the RCR. At power-up, the RCR is set to 0070h. The RCR is accessed using CRE

and A[19] LOW.

Figure 36. Latency Counter (Variable Initial Latency, No Refresh Collision)

Code 2

Valid

Output

Valid

Output

Valid

Output

Valid

Output

Valid Address

Valid

Output

Code 3

(Default)

Valid

Output

Valid

Output

Valid

Output

Valid

Output

Code 4

Valid

Output

Valid

Output

Valid

Output

VIH

VIL

VIH

VIL

VIH

VIL

VOH

VOL

VOH

VOL

VOH

VOL

CLK

A[21:0]

ADV#

A/DQ[15:0]

Don't care

Undefined

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