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S71GS256 Datasheet(PDF) 126 Page - SPANSION

Part # S71GS256
Description  128N based MCPs
PDF  195 Pages
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Manufacturer  SPANSION [SPANSION]
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S71GS256 Datasheet(HTML) 126 Page - SPANSION

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126
CellularRAM Type 2
cellRAM_00_A0 October 4, 2004
Advan ce
In form ati o n
DC Characteristics
Notes:
1. Wireless Temperature (-25ºC < TC < +85ºC); Industrial Temperature (-40ºC < TC < +85ºC).
2. Input signals may overshoot to VCCQ + 1.0V for periods less than 2ns during transitions.
3. Input signals may undershoot to VSS - 1.0V for periods less than 2ns during transitions.
4. BCR[5:4] = 00b.
5. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add the
current required to drive output capacitance expected in the actual system.
6. ISB (MAX) values measured with PAR set to FULL ARRAY and TCR set to +85°C. To achieve low standby current,
all inputs must be driven to either VCCQ or VSS.
Table 26. Electrical Characteristics and Operating Conditions
Description
Conditions
Symbol
Min
Max
Units
Notes
Supply Voltage
VCC
1.70
1.95
V
I/O Supply Voltage
VCCQ
W: 1.8V
1.70
1.95
V
J: 1.5V
1.35
1.65
V
Input High Voltage
VIH
VCCQ - 0.4 VCCQ + 0.2
V
2
Input Low Voltage
VIL
-0.20
0.4
V
3
Output High Voltage
IOH = -0.2mA
VOH
0.80 VCCQV
4
Output Low Voltage
IOL = +0.2mA
VOL
0.20 VCCQV
4
Input Leakage Current
VIN = 0 to VCCQILI
1µA
Output Leakage Current
OE# = VIH or
Chip Disabled
ILO
1µA
Operating Current
Asynchronous Random READ
VIN = VCCQ or 0V
Chip Enabled,
IOUT = 0
ICC1
-70
25
mA
5
-85
20
Asynchronous Page READ
-70
15
-85
12
Initial Access, Burst READ
VIN = VCCQ or 0V
Chip Enabled,
IOUT = 0
ICC1
80 MHz
35
mA
5
66 MHz
30
Continuous Burst READ
80 MHz
18
66 MHz
15
WRITE Operating Current
VIN = VCCQ or 0V
Chip Enabled
ICC2
-70
25
mA
-85
20
Standby Current
VIN = VCCQ or 0V
CE# = VCCQ
ISB
128 M
180
µA
6
64 M
120
32 M
110



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