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S71GS256 Datasheet(PDF) 126 Page - SPANSION |
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S71GS256 Datasheet(HTML) 126 Page - SPANSION |
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126 / 195 page ![]() 126 CellularRAM Type 2 cellRAM_00_A0 October 4, 2004 Advan ce In form ati o n DC Characteristics Notes: 1. Wireless Temperature (-25ºC < TC < +85ºC); Industrial Temperature (-40ºC < TC < +85ºC). 2. Input signals may overshoot to VCCQ + 1.0V for periods less than 2ns during transitions. 3. Input signals may undershoot to VSS - 1.0V for periods less than 2ns during transitions. 4. BCR[5:4] = 00b. 5. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add the current required to drive output capacitance expected in the actual system. 6. ISB (MAX) values measured with PAR set to FULL ARRAY and TCR set to +85°C. To achieve low standby current, all inputs must be driven to either VCCQ or VSS. Table 26. Electrical Characteristics and Operating Conditions Description Conditions Symbol Min Max Units Notes Supply Voltage VCC 1.70 1.95 V I/O Supply Voltage VCCQ W: 1.8V 1.70 1.95 V J: 1.5V 1.35 1.65 V Input High Voltage VIH VCCQ - 0.4 VCCQ + 0.2 V 2 Input Low Voltage VIL -0.20 0.4 V 3 Output High Voltage IOH = -0.2mA VOH 0.80 VCCQV 4 Output Low Voltage IOL = +0.2mA VOL 0.20 VCCQV 4 Input Leakage Current VIN = 0 to VCCQILI 1µA Output Leakage Current OE# = VIH or Chip Disabled ILO 1µA Operating Current Asynchronous Random READ VIN = VCCQ or 0V Chip Enabled, IOUT = 0 ICC1 -70 25 mA 5 -85 20 Asynchronous Page READ -70 15 -85 12 Initial Access, Burst READ VIN = VCCQ or 0V Chip Enabled, IOUT = 0 ICC1 80 MHz 35 mA 5 66 MHz 30 Continuous Burst READ 80 MHz 18 66 MHz 15 WRITE Operating Current VIN = VCCQ or 0V Chip Enabled ICC2 -70 25 mA -85 20 Standby Current VIN = VCCQ or 0V CE# = VCCQ ISB 128 M 180 µA 6 64 M 120 32 M 110 |
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