BLW78 datasheet(6/16 Pages) PHILIPS

6 / 16 page

August 1986

Philips Semiconductors

Product speciﬁcation

HF/VHF power transistor

BLW78

APPLICATION INFORMATION

R.F. performance in c.w. operation (unneutralized common-emitter class-B circuit); Th =25 °C

List of components:

Note

1. ATC means American Technical Ceramics.

f (MHz)

VCE (V)

PL (W)

PD (W)

η (%)

zi (Ω)

ZL (Ω)

150

100

≤ 25

≥ 70

0,74

+ j1,35

4,30

+ j0,60

C1 = C2 = C7 = C8 = 5 to 100 pF ﬁlm dielectric trimmer

C3 = 203 pF; 2

× 82 pF and 39 pF multilayer ceramic chip capacitors (500 V, ATC(1)) in parallel

C4 = 39 pF multilayer ceramic chip capacitor (500 V, ATC(1))

C5 = 1 nF feed-through capacitor

C6 = 100 nF polyester capacitor

L1 = strip (30 mm

× 8 mm); bent to form inverted ‘U’ shape with top 15 mm above heatsink, and bottom 5 mm above

heatsink

L2 = 1

µH r.f. choke

L3 = strip; shape as shown in Fig.8; 5 mm above heatsink

L4 = strip (40 mm

× 8 mm); bent in form

, 25 mm at 15 mm above heatsink, 5 mm at 5 mm above heatsink

L5 = strip (75 mm long; width 8 mm); 5 mm above base

L1, L3, L4, and L5 are copper strips with a thickness of 0,6 mm.

Heatsink: aluminium; 0,9 K/W

At PL = 100 W and VCE = 28 V, the output power at heatsink temperatures between 25 °C and 90 °C relative to that at

°C is diminished by typ. 0,12 W/K.

Component layout on an aluminium heatsink for 150 MHz test circuit is shown in Fig.8.

Fig.7 Test circuit; c.w. class-B; f = 150 MHz.

handbook, full pagewidth

MGP548

Ω

+VCC

T.U.T.

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