August 1986

2

Philips Semiconductors

Product specification

HF/VHF power transistor

BLW78

DESCRIPTION

N-P-N silicon planar epitaxial

transistor intended for use in class-A,

AB or B operated mobile, industrial

and military transmitters in the h.f.

and v.h.f. bands. It is resistance

stabilized and is guaranteed to

withstand severe load mismatch

conditions.

ceramic cap. All leads are isolated

from the flange.

QUICK REFERENCE DATA

Note

1. Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones.

Relative to the according peak envelope powers these figures should be increased by 6 dB.

MODE OF OPERATION

V

A

f

MHz

W

dB

η

%

dB

c.w. (class-B)

28

−

150

100

>

6

>

70

−

s.s.b. (class-A)

26

3

28

35 (P.E.P.)

typ. 19,5

−

typ.

−40

s.s.b. (class-AB)

28

0,05

28

100 (P.E.P.)

typ. 19,0

typ. 42

typ.

−30

PIN CONFIGURATION

Fig.1 Simplified outline. SOT121B.

handbook, halfpage

MLA876

43

2

1

PINNING - SOT121B.

PIN

DESCRIPTION

1

collector

2

emitter

3

base

4

emitter

PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely

safe provided that the BeO disc is not damaged.