BLW78 datasheet(4/16 Pages) PHILIPS

4 / 16 page

August 1986

Philips Semiconductors

Product speciﬁcation

HF/VHF power transistor

BLW78

CHARACTERISTICS

Tj =25 °C

Notes

1. Measured under pulse conditions: tp ≤ 300 µs; δ≤ 0,02.

2. Measured under pulse conditions: tp ≤ 50 µs; δ≤ 0,01.

Collector-emitter breakdown voltage

VBE =0;IC =50mA

V(BR)CES

70 V

Collector-emitter breakdown voltage

open base; IC = 100 mA

V(BR)CEO

35 V

Emitter-base breakdown voltage

open collector; IE = 5 mA

V(BR)EBO

Collector cut-off current

VBE = 0; VCE =35V

ICES

5mA

D.C. current gain(1)

IC = 5 A; VCE =5V

hFE

20 to 85

Collector-emitter saturation voltage

IC = 15 A; IB =3 A

VCEsat

typ.

2 V

Transition frequency at f

= 100 MHz(2)

−IE = 5 A; VCB =28V

typ. 370 MHz

−I

E = 15 A; VCB =28V

typ. 350 MHz

Collector capacitance at f = 1 MHz

IE =Ie = 0; VCB =28V

typ. 155 pF

Feedback capacitance at f=1MHz

IC = 100 mA; VCE =28V

Cre

typ. 102 pF

Collector-ﬂange capacitance

Ccf

typ.

3 pF

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