NXP Semiconductors

BSS87

200 V, N-channel vertical D-MOS transistor

BSS87

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Product data sheet

9 December 2014

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8. Limiting values

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VDS

drain-source voltage

-

200

V

VGS

gate-source voltage

Tj = 25 °C

-20

20

V

VGS = 10 V; Tamb = 25 °C; t ≤ 5 s

[1]

-

0.7

A

VGS = 10 V; Tamb = 25 °C

[1]

-

0.4

A

ID

drain current

VGS = 10 V; Tamb = 100 °C

[1]

-

0.2

A

IDM

peak drain current

Tamb = 25 °C; single pulse; tp ≤ 10 µs

-

1.6

A

[2]

-

0.58

W

Tamb = 25 °C

[1]

-

1

W

Ptot

total power dissipation

Tsp = 25 °C

-

12.5

W

Tj

junction temperature

-55

150

°C

Tamb

ambient temperature

-55

150

°C

Tstg

storage temperature

-65

150

°C

Source-drain diode

IS

source current

Tamb = 25 °C

[1]

-

0.4

A

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.

[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.