BSS87

200 V, N-channel vertical D-MOS transistor

9 December 2014

Product data sheet

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1. General description

N-channel enhancement mode vertical Double-Diffused Field-Effect Transistor (D-

MOSFET) in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device

(SMD) plastic package.

2. Features and benefits

• Direct interface to Complementary (C-MOS) transistor and Transistor-Transistor

Logic (TTL) devices.

• Very fast switching

• No secondary breakdown

3. Applications

• Relay driver

• High-speed line driver

• Load-side loadswitch

• Switching circuits

4. Quick reference data

Table 1.

Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VDS

drain-source voltage

-

-

200

V

VGS

gate-source voltage

Tj = 25 °C

-20

-

20

V

ID

drain current

VGS = 10 V; Tamb = 25 °C

[1]

-

-

0.4

A

Static characteristics

RDSon

drain-source on-state

resistance

VGS = 10 V; ID = 0.4 A; Tj = 25 °C

-

1.6

3

Ω

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.