NXP Semiconductors

BSS87

200 V, N-channel vertical D-MOS transistor

BSS87

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Product data sheet

9 December 2014

8 / 16

VDS (V)

0

5

4

2

3

1

aaa-014576

0.8

0.4

1.2

1.6

ID

(A)

0

VGS = 10 V

4.5 V

3.5 V

3 V

2.5 V

2 V

Tj = 25 °C

Fig. 6. Output characteristics: drain current as a

function of drain-source voltage; typical values

aaa-014577

VGS (V)

0

3

2

1

10-4

10-5

10-3

ID

(A)

10-6

min

typ

max

Tj = 25 °C; VDS = 10 V

Fig. 7. Sub-threshold drain current as a function of

gate-source voltage

ID (A)

0

1.6

1.2

0.4

0.8

aaa-014578

2

4

6

RDSon

(Ω)

0

VGS = 10 V

2 V

3 V

4 V

2.5 V

3.5 V

4.5 V

Tj = 25 °C

Fig. 8. Drain-source on-state resistance as a function

of drain current; typical values

VGS (V)

0

10

8

4

6

2

aaa-014579

2

4

6

RDSon

(Ω)

0

Tj = 150 °C

Tj = 25 °C

ID = 0.4 A

Fig. 9. Drain-source on-state resistance as a function

of gate-source voltage; typical values