NXP Semiconductors

BSS87

200 V, N-channel vertical D-MOS transistor

BSS87

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Product data sheet

9 December 2014

9 / 16

VGS (V)

0

5

4

2

3

1

aaa-014580

0.8

0.4

1.2

1.6

ID

(A)

0

Tj = 150 °C

Tj = 25 °C

VDS > ID × RDSon

Fig. 10. Transfer characteristics: drain current as a

function of gate-source voltage; typical values

Tj (°C)

-60

180

120

0

60

aaa-014581

1.0

1.5

0.5

2.0

2.5

a

0

Fig. 11. Normalized drain-source on-state resistance

as a function of junction temperature; typical

values

Tj (°C)

-60

180

120

0

60

aaa-014582

1

2

3

VGS(th)

(V)

0

min

typ

max

ID = 1 mA; VDS = VGS

Fig. 12. Gate-source threshold voltage as a function of

junction temperature

VDS (V)

10-1

102

10

1

aaa-014583

102

10

103

C

(pF)

1

Ciss

Coss

Crss

f = 1 MHz; VGS = 0 V

Fig. 13. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values