NXP Semiconductors

BSS87

200 V, N-channel vertical D-MOS transistor

BSS87

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Product data sheet

9 December 2014

7 / 16

10. Characteristics

Table 7.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V(BR)DSS

drain-source

breakdown voltage

ID = 250 µA; VGS = 0 V; Tj = 25 °C

200

-

-

V

VGSth

gate-source threshold

voltage

ID = 1 mA; VDS = VGS; Tj = 25 °C

0.8

-

2.8

V

VDS = 60 V; VGS = 0 V; Tj = 25 °C

-

-

200

nA

IDSS

drain leakage current

VDS = 200 V; VGS = 0 V; Tj = 25 °C

-

-

60

µA

VGS = 20 V; VDS = 0 V; Tj = 25 °C

-

-

100

nA

IGSS

gate leakage current

VGS = -20 V; VDS = 0 V; Tj = 25 °C

-

-

-100

nA

VGS = 10 V; ID = 0.4 A; Tj = 25 °C

-

1.6

3

Ω

VGS = 10 V; ID = 0.4 A; Tj = 150 °C

-

3.7

7

Ω

RDSon

drain-source on-state

resistance

VGS = 4.5 V; ID = 0.3 A; Tj = 25 °C

-

1.9

4

Ω

gfs

forward

transconductance

VDS = 25 V; ID = 0.4 A; Tj = 25 °C

-

0.8

-

S

Dynamic characteristics

QG(tot)

total gate charge

-

5.5

10

nC

QGS

gate-source charge

-

0.3

-

nC

QGD

gate-drain charge

VDS = 50 V; ID = 0.25 A; VGS = 10 V;

Tj = 25 °C

-

1.4

-

nC

Ciss

input capacitance

-

100

120

pF

Coss

output capacitance

-

20

30

pF

Crss

reverse transfer

capacitance

VDS = 25 V; f = 1 MHz; VGS = 0 V;

Tj = 25 °C

-

10

15

pF

td(on)

turn-on delay time

-

2.7

6

ns

tr

rise time

-

3.7

6

ns

td(off)

turn-off delay time

-

16.4

30

ns

tf

fall time

VDS = 50 V; ID = 0.25 A; VGS = 10 V;

RG(ext) = 6 Ω; Tj = 25 °C

-

7.5

20

ns

Source-drain diode

VSD

source-drain voltage

IS = 0.4 A; VGS = 0 V; Tj = 25 °C

-

0.8

1.2

V