PML260SN_2

© Koninklijke Philips Electronics N.V. 2006. All rights reserved.

Product data sheet

Rev. 02 — 29 May 2006

3 of 12

Philips Semiconductors

PML260SN

N-channel TrenchMOS standard level FET

Fig 1.

Normalized total power dissipation as a

function of mounting base temperature

Fig 2.

Normalized continuous drain current as a

function of mounting base temperature

Tmb =25 °C; IDM is single pulse; VGS =10V

Fig 3.

Safe operating area; continuous and peak drain currents as a function of drain-source voltage

03ne36

0

40

80

120

0

50

100

150

200

Tmb (°C)

Pder

(%)

03ne37

0

40

80

120

0

50

100

150

200

Tmb (°C)

Ider

(%)

P

der

P

tot

P

tot 25

°C

()

------------------------

100 %

×

=

I

der

I

D

I

D25

°C

()

--------------------

100 %

×

=

003aab281

10

-1

1

10

10

2

10

-1

1

10

10

2

10

3

VDS (V)

ID

(A)

DC

1 ms

100

µs

Limit RDSon = VDS / ID

10 ms

10

µs

tp =