PML260SN_2

© Koninklijke Philips Electronics N.V. 2006. All rights reserved.

Product data sheet

Rev. 02 — 29 May 2006

4 of 12

Philips Semiconductors

PML260SN

N-channel TrenchMOS standard level FET

5.

Thermal characteristics

[1]

Mounted on a printed-circuit board; vertical in still air.

Table 4.

Thermal characteristics

Symbol Parameter

Conditions

Min

Typ

Max

Unit

Rth(j-mb) thermal resistance from junction to mounting base see Figure 4

-

-

2.5

K/W

Rth(j-a)

thermal resistance from junction to ambient

minimum footprint

[1] -

60

-

K/W

Fig 4.

Transient thermal impedance from junction to mounting base as a function of pulse duration

003aab280

10

-1

1

10

10

-5

10

-4

10

-3

10

-2

10

-1

1

10

tp (s)

Zth(j-mb)

(K/W)

single pulse

0.2

0.1

0.05

δ =0.5

0.02

tp

T

P

t

tp

T

δ =