PML260SN datasheet(7/13 Pages) NEXPERIA

Part #	PML260SN

Description	N-channel TrenchMOS standard level FET

PDF	13 Pages

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Manufacturer	NEXPERIA [Nexperia B.V. All rights reserved]

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7 / 13 page

PML260SN_2

Product data sheet

Rev. 02 — 29 May 2006

6 of 12

Philips Semiconductors

PML260SN

N-channel TrenchMOS standard level FET

Tj =25 °CTj =25 °C

Fig 5.

Output characteristics: drain current as a

function of drain-source voltage; typical values

Fig 6.

Drain-source on-state resistance as a function

of drain current; typical values

Tj =25 °C and 150 °C; VDS >ID × RDSon

Fig 7.

Transfer characteristics: drain current as a

function of gate-source voltage; typical values

Fig 8.

Normalized drain-source on-state resistance

factor as a function of junction temperature

003aab063

VDS (V)

(A)

VGS (V) = 10

3.8

3.6

3.4

3.2

003aab064

200

400

600

800

048

ID (A)

RDSon

Ω)

3.8

3.6

VGS (V) =

003aab065

012

345

VGS (V)

(A)

Tj = 150 °C

°C

03al52

-60

120

180

Tj (°C)

DSon

DSon 25

°C

()

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