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PML260SN Datasheet(PDF) 8 Page - Nexperia B.V. All rights reserved

Part # PML260SN
Description  N-channel TrenchMOS standard level FET
PDF  13 Pages
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Manufacturer  NEXPERIA [Nexperia B.V. All rights reserved]
Direct Link  https://www.nexperia.com/
Logo NEXPERIA - Nexperia B.V. All rights reserved

PML260SN Datasheet(HTML) 8 Page - Nexperia B.V. All rights reserved

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PML260SN_2
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 02 — 29 May 2006
7 of 12
Philips Semiconductors
PML260SN
N-channel TrenchMOS standard level FET
ID = 1 mA; VDS =VGS
Tj =25 °C; VDS =5V
Fig 9.
Gate-source threshold voltage as a function of
junction temperature
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
ID = 2.6 A; VDS = 100 V
Fig 11. Gate-source voltage as a function of gate
charge; typical values
Fig 12. Gate charge waveform definitions
Tj (°C)
−60
180
120
060
03aa32
2
3
1
4
5
VGS(th)
(V)
0
max
typ
min
03aa35
VGS (V)
06
4
2
10−4
10−5
10−2
10−3
10−1
ID
(A)
10−6
min
typ
max
003aab066
0
2
4
6
8
10
04
8
12
16
QG (nC)
VGS
(V)
003aaa508
VGS
VGS(th)
QGS1
QGS2
QGD
VDS
QG(tot)
ID
QGS
VGS(pl)



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