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LM2104 Datasheet(PDF) 16 Page - Texas Instruments

Part # LM2104
Description  LM2104 107-V, 0.5-A, 0.8-A Half-Bridge Driver with 8-V UVLO, Dead Time, and Shutdown Pin
PDF  28 Pages
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

LM2104 Datasheet(HTML) 16 Page - Texas Instruments

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As a general rule, the local VGVDD bypass capacitor must be 10 times greater than the value of CBOOT, as shown
in Equation 6.
CGVDD = 1 µF
(6)
The bootstrap and bias capacitors must be ceramic types with X7R dielectric. The voltage rating must be twice
that of the maximum VGVDD considering capacitance tolerances once the devices have a DC bias voltage across
them and to ensure long-term reliability.
8.2.2.2 Select External Gate Driver Resistor
The external gate driver resistor, RGATE, is sized to reduce ringing caused by parasitic inductances and
capacitances and also to limit the current coming out of the gate driver.
The peak GH pullup current is calculated in Equation 7.
IGHH= VGVDD−VDH
RGHH+RGATE+RGFET_INT
(7)
where
• IGHH = GH Peak pullup current
• VDH = Bootstrap diode forward voltage drop
• RGHH = Gate driver internal GH pullup resistance, estimated from the testing conditions, that is RGHH =
VGH_H / IGH
• RGATE = External gate drive resistance
• RGFET_INT = MOSFET internal gate resistance, provided by transistor data sheet
Similarly, the peak GH pulldown current is shown in Equation 8.
IGHL= VGVDD−VDH
RGHL+RGATE+RGFET_INT
(8)
where
• RGHL is the GH pulldown resistance
The peak GL pullup current is shown in Equation 9.
IGLH= VGVDD
RGLH+RGATE+RGFET_INT
(9)
where
• RGLH is the GL pullup resistance
The peak GL pulldown current is shown in Equation 10.
IGLL= VGVDD
RGLL+RGATE+RGFET_INT
(10)
where
• RGLL is the GL pulldown resistance
For some scenarios, if the applications require fast turnoff, an anti-paralleled diode on RGate could be used to
bypass the external gate drive resistor and speed up turnoff transition.
8.2.2.3 Estimate the Driver Power Loss
The total driver IC power dissipation can be estimated through the following components.
1. Static power losses, PQC, due to quiescent currents IGVDD and IBST is shown in Equation 11.
LM2104
SNVSCH8A – SEPTEMBER 2023 – REVISED OCTOBER 2023
www.ti.com
16
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Product Folder Links: LM2104



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