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LM2104 Datasheet(PDF) 18 Page - Texas Instruments

Part # LM2104
Description  LM2104 107-V, 0.5-A, 0.8-A Half-Bridge Driver with 8-V UVLO, Dead Time, and Shutdown Pin
PDF  28 Pages
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

LM2104 Datasheet(HTML) 18 Page - Texas Instruments

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8.2.3 Application Curves
Figure 8-2 shows the GL fall time and GH rise time as well as the propagation delays for both GL and GH when
the input IN transitions from low to high. Likewise, Figure 8-3 shows the GL rise time and GH fall time as well as
the propagation delays for both GL and GH when the input IN transitions from high to low. Each channel (IN, SD,
GH, and GL) is labeled and displayed on the left hand of the waveforms.
The testing condition: load capacitance is 1 nF, gate resistor is 4 Ω, VDD = 12 V, fSW = 50 kHz.
CL = 1 nF
RG = 4 Ω
VDD = 12 V
fSW = 50 kHz
Figure 8-2. GL Fall Time, GH Rise Time and
Propagation Delays
CL = 1 nF
RG = 4 Ω
VDD = 12 V
fSW = 50 kHz
Figure 8-3. GL Rise Time, GH Fall Time and
Propagation Delays
9 Power Supply Recommendations
The recommended bias supply voltage range for LM2104 is from 9 V to 18 V. The lower end of this range is
governed by the internal undervoltage lockout (UVLO) protection feature of the VGVDD supply circuit blocks. The
upper end of this range is driven by the 18-V recommended maximum voltage rating of the GVDD pin. It is
recommened that the voltage on GVDD pin is lower than the maximum recommended voltage to account for
transient voltage spikes.
The UVLO protection feature also involves a hysteresis function. This means that once the device is operating
in normal mode, if the VGVDD voltage drops, the device continues to operate in normal mode as long as the
voltage drop does not exceed the hysteresis specification, VDDHYS. If the voltage drop is more than hysteresis
specification, the device shuts down. Therefore, while operating at or near the 9-V range, the voltage ripple on
the auxiliary power supply output must be smaller than the hysteresis specification of LM2104 to avoid triggering
device-shutdown.
A local bypass capacitor must be placed between the GVDD and GND pins and this capacitor must be
located as close to the device as possible. A low-ESR, ceramic surface mount capacitor is recommended. TI
recommends using two capacitors across GVDD and GND: a low capacitance ceramic surface-mount capacitor
for high-frequency filtering placed very close to GVDD and GND pins, and another high capacitance value
surface-mount capacitor for IC bias requirements. In a similar manner, the current pulses delivered by the GH
pin are sourced from the BST pin. Therefore, a local decoupling capacitor is recommended between the BST
and SH pins.
LM2104
SNVSCH8A – SEPTEMBER 2023 – REVISED OCTOBER 2023
www.ti.com
18
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Product Folder Links: LM2104



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