6.4 Thermal Information (continued)

THERMAL METRIC(1)

LM2005

LM2005

UNIT

D (SOIC)

DSG (WSON)

8 PINS

8 PINS

RθJC(bot)

Junction-to-case (bottom) thermal resistance

N/A

9.9

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report, SPRA953.

6.5 Electrical Characteristics

VGVDD = VBST = 12 V, GND = VSH = 0 V, No Load on GL or GH, TJ = 25°C (unless otherwise noted).

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

SUPPLY CURRENTS

IGVDD

GVDD quiescent current

VINL = VINH = 0 V

430

μA

IDDO

GVDD operating current

f = 50 kHz, CLOAD = 0

0.56

mA

IBST

Total BST quiescent current

VINL = VINH = 0 V, VDD = 12 V

150

uA

IBSTO

Total BST operating current

f = 50 kHz, CLOAD = 0

0.16

mA

IBSTS

BST to GND quiescent current

VSH = VBST = 95 V, GVDD = 12 V

33.3

μA

IBSTSO

BST to GND operating current

f = 50 kHz, CLOAD = 0

0.07

mA

INPUT

VHIT

Input voltage high threshold

-40°C to 125°C

1.45

2

V

VLIT

Input voltage low threshold

-40°C to 125°C

0.8

1.3

V

VIHYS

Input voltage hysteresis

0.15

V

RIN

Input pulldown resistance

VIN = 3 V

200

kΩ

UNDERVOLTAGE PROTECTION (UVLO)

VGVDDR

GVDD rising threshold

VGVDDR = VGVDD - GND, -40°C to 125°C

8.15

8.75

V

VGVDDF

GVDD falling threshold

VGVDDF = VGVDD - GND, -40°C to 125°C

6.75

7.7

V

VDDHYS

GVDD threshold hysteresis

0.45

V

VBSTR

VBST rising threshold

VBSTR = VBST - VSH, -40°C to 125°C

7.6

8.5

V

VBSTF

VBST falling threshold

VBSTR = VBST - VSH, -40°C to 125°C

6.25

7.15

V

VBSTHYS

VBST threshold hysteresis

0.45

V

BOOTSTRAP DIODE

VF

Low-current forward voltage

IBOOT = 100 uA

0.6

V

VFI

High-current forward voltage

IBOOT = 100 mA

2.1

V

RBOOT

Bootstrap dynamic resistance

IBOOT = 100 mA and 80 mA

12.5

Ω

LO GATE DRIVER

VGL_L

Low level output voltage

IGL = 100 mA, VGL_L = VGL – GND

0.25

V

VGL_H

High level output voltage

IGL = -100 mA, VGL_H = VGVDD – VGL

0.8

V

Peak pullup current(1)

VGL = 0V

0.5

A

Peak pulldown current(1)

VGL = 12V

0.8

A

HO GATE DRIVER

VGH_L

Low level output voltage

IGH = 100 mA, VGH_L = VGH – VSH

0.25

V

VGH_H

High level output voltage

IGH = –100 mA, VGH_H = VBST – VGH

0.8

V

Peak pullup current(1)

VGH = 0V

0.5

A

Peak pulldown current(1)

VGH = 12V

0.8

A

(1)

Parameter not tested in production.

6.6 Switching Characteristics

VGVDD = VBST = 12 V, GND = VSH = 0 V, No Load on GL or GH, TJ = 25°C (unless otherwise noted).

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

PROPAGATION DELAYS

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LM2005

SNVSCB6B – FEBRUARY 2023 – REVISED SEPTEMBER 2023

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