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LM2005 Datasheet(PDF) 19 Page - Texas Instruments

Part # LM2005
Description  LM2005 107-V, 0.5-A, 0.8-A Half-Bridge Driver with 8-V UVLO and Integrated Bootstrap Diode
PDF  32 Pages
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

LM2005 Datasheet(HTML) 19 Page - Texas Instruments

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10 Layout
10.1 Layout Guidelines
Optimum performance of half-bridge gate drivers cannot be achieved without taking due considerations during
circuit board layout. The following points are emphasized:
1. Low-ESR and low-ESL capacitors must be connected close to the IC between GVDD and GND pins and
between BST and SH pins to support high peak currents being drawn from GVDD and BST during the
turn-on of the external MOSFETs.
2. To prevent large voltage transients at the drain of the top MOSFET, a low-ESR electrolytic capacitor and a
good-quality ceramic capacitor must be connected between the MOSFET drain and ground (GND).
3. To avoid large negative transients on the switch node (SH) pin, the parasitic inductances between the source
of the top MOSFET and the drain of the bottom MOSFET (synchronous rectifier) must be minimized.
4. Grounding considerations:
• The first priority in designing grounding connections is to confine the high peak currents that charge and
discharge the MOSFET gates to a minimal physical area. This will decrease the loop inductance and
minimize noise issues on the gate terminals of the MOSFETs. The gate driver must be placed as close as
possible to the MOSFETs.
• The second consideration is the high current path that includes the bootstrap capacitor, the bootstrap
diode, the local ground referenced bypass capacitor, and the low-side MOSFET body diode. The
bootstrap capacitor is recharged on a cycle-by-cycle basis through the bootstrap diode from the ground
referenced GVDD bypass capacitor. The recharging occurs in a short time interval and involves high
peak current. Minimizing this loop length and area on the circuit board is important to ensure reliable
operation.
10.2 Layout Example
CGVDD for high frequency filtering
CGVDD for IC bias requirements
Input RC filters
CBOOT capacitor
Ground plane
GH gate
resistors and
antiparallel
diode
GL gate
resistors and
antiparallel
diode
LM2105
Figure 10-1. Layout Example
www.ti.com
LM2005
SNVSCB6B – FEBRUARY 2023 – REVISED SEPTEMBER 2023
Copyright © 2023 Texas Instruments Incorporated
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