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ELECTRICAL CHARACTERISTICS

TPS65053

SLVS754 – MARCH 2007

RECOMMENDED OPERATING CONDITIONS (continued)

MIN

NOM

MAX

UNIT

Cin1-2

Input capacitor at VINLDO1, VINLDO2/3 (1)

2.2

µF

COUT1

Output capacitor at VLDO1 (1)

4.7

µF

COUT2-3

Output capacitor at VLDO2-3 (1)

2.2

µF

ILDO1

Output current at VLDO1

400

ILDO2,3

Output current at VLDO2,3

200

Operating ambient temperature range

–40

°C

Operating junction temperature range

–40

125

°C

RCC

Resistor from battery voltage to VCC used for filtering(2)

Ω

(2)

Up to 2 mA can flow into VCC when both converters are running in PWM, this resistor causes the UVLO threshold to be shifted

accordingly.

cc = VINDCDC1/2 = 3.6V, EN = Vcc, MODE = GND, L = 2.2µH, COUT = 22µF, TA = –40°C to 85°C typical values

are at T

A = 25°C (unless otherwise noted).

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

SUPPLY CURRENT

Vcc

Input voltage range

2.5

6.0

One converter, IOUT = 0 mA.PFM mode enabled (Mode =

GND) device not switching,

µA

EN_DCDC1 = Vin OR EN_DCDC2 = Vin;

EN_LDO1= EN_LDO2 = EN_LDO3 = GND

Two converters, IOUT = 0 mA, PFM mode enabled (Mode =

Operating quiescent current

0) device not switching,

Total current into VCC, VINDCDC1/2,

µA

EN_DCDC1 = Vin AND EN_DCDC2 = Vin;

VINLDO1, VINLDO2/3

EN_LDO1 = EN_LDO2 = EN_LDO3 = GND

One converter, IOUT = 0 mA, PFM mode enabled (Mode =

GND) device not switching,

145

210

µA

EN_DCDC1 = Vin OR EN_DCDC2 = Vin;

EN_LDO1 = EN_LDO2 = EN_LDO3 = Vin

One converter, IOUT = 0 mA, Switching with no load (Mode

= Vin), PWM operation

0.85

EN_DCDC1 = Vin OR EN_DCDC2 = Vin;

EN_LDO1 = EN_LDO2 = EN_LDO3 = GND

Operating quiescent current into VCC

Two converters, IOUT = 0 mA, Switching with no load (Mode

= Vin), PWM operation

1.25

EN_DCDC1 = Vin AND EN_DCDC2 = Vin;

EN_LDO1 = EN_LDO2 = EN_LDO3 = GND

EN_DCDC1 = EN_DCDC2 = GND

I(SD)

Shutdown current

µA

EN_LDO1 = EN_LDO2 = EN_LDO3 = GND

Undervoltage lockout threshold for

V(UVLO)

Voltage at VCC

1.8

2.0

DCDC converters and LDOs

EN_DCDC1, EN_DCDC2, EN_LDO1, EN_LDO2, EN_LDO3, MODE

MODE, EN_DCDC1, EN_DCDC2, EN_LDO1, EN_LDO2,

VIH

High-level input voltage

1.2

VCC

EN_LDO3

MODE, EN_DCDC1, EN_DCDC2, EN_LDO1, EN_LDO2,

VIL

Low-level input voltage

0.4

EN_LDO3

MODE, EN_DCDC1, EN_DCDC2, EN_LDO1, EN_LDO2,

IIN

Input bias current

0.01

1.0

µA

EN_LDO3, MODE = GND or VIN

POWER SWITCH

VINDCDC1/2 = 3.6 V

280

630

P-channel MOSFET on

DCDC1,

rDS(on)

Ω

resistance

DCDC2

VINDCDC1/2 = 2.5 V

400

ILD_PMOS

P-channel leakage current

V(DS) = 6 V

µA

VINDCDC1/2 = 3.6 V

220

450

N-channel MOSFET on

DCDC1,

rDS(on)

Ω

resistance

DCDC2

VINDCDC1/2 = 2.5 V

320

ILK_NMOS

N-channel leakage current

V(DS) = 6.0 V

µA

Forward Current Limit

DCDC1

1.19

1.4

1.65

I(LIMF)

PMOS (High-Side) and

2.5 V

≤ V

IN ≤ 6.0 V

DCDC2

0.85

1.0

1.15

NMOS (Low side)

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