Datasheet, Public

Page 5

[v2-00] 2023-Jan-04

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TMD2636 − Electrical Characteristics

All limits are guaranteed. The parameters with min. and max.

values are guaranteed with production tests or SQC (Statistical

Quality Control) methods.

Figure 6:

Recommended Operating Conditions

Note(s):

1. Power dissipation averaged over 1 second period.

Figure 7:

Operating Characteristics, VDD = 1.8 V, TA = 25°C (unless otherwise noted)

Note(s):

1. Values are shown at the VDD pin and do not include current through the IR VCSEL.

2. Active state occurs when PON = 1 and the device is actively integrating. This time is determined by the number of pulses (PPULSE)

and the pulse length (PULSE_LEN) according to the formula: (7 x PULSE_LEN) + PPULSE x (2 x PULSE_LEN + 22μs) + 78.75μs.

Symbol

Parameter

Min

Typ

Max

Units

VDD

Supply voltage to sensor

1.7

1.82.0

V

VDD3

Supply voltage to IR emitter

2.9

3.3

3.6

V

PDISS

Average power dissipation

(1)

20

mW

TA

Operating ambient temperature

-30

85

°C

Symbol

Parameter

Conditions

Min

Typ

Max

Units

fOSC

Oscillator frequency

7.9

8.1

8.3

MHz

IDD

Supply current (1)

Active state (PON=1) (2)

197

340

482

μA

Idle state (PON=1) (3)

30

Sleep state (PON = 0) (4)

0.7

VOL

INT, SDA output low voltage

6 mA sink current

0.6

V

ILEAK

Leakage current, SDA, SCL, INT

-5

5

μA

VIH

SCL, SDA input high voltage (5)

1.26

V

VIL

SCL, SDA input low voltage

0.54

V

TWakeup

Time for device to wakeup from the

sleep state and enter the active state if

both PON and PEN are set to one at the

same time.

100

μs

TActive

Time from power-on to ready to receive

I²C commands

1.5

ms

Electrical Characteristics