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SPD30P06 Datasheet(PDF) 3 Page - EVER SEMICONDUCTOR CO.,LIMITED |
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SPD30P06 Datasheet(HTML) 3 Page - EVER SEMICONDUCTOR CO.,LIMITED |
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3 / 9 page ![]() Electrical Characteristics,at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Transconductance VDS³2*ID*RDS(on)max , ID = -21.5 A gfs 5.2 10.4 S Input capacitance VGS = 0 V, VDS = -25 V, f = 1 MHz Ciss 1228 1535 pF Output capacitance Coss 387 383 VGS = 0 V, VDS = -25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, VDS = -25 V, f = 1 MHz Crss 142 177 Turn-on delay time VDD = -30 V, VGS = -10 V, ID = -21.5 A, RG = 1.6 W td(on) 13 19.5 ns Rise time VDD = -30 V, VGS = -10 V, ID = -21.5 A, RG = 1.6 W tr 11 16.5 Turn-off delay time td(off) 30 45 VDD = -30 V, VGS = -10 V, ID = -21.5 A, RG = 1.6 W Fall time VDD = -30 V, VGS = -10 V, ID = -21.5 A, RG = 1.6 W tf 20 30 3 Rev:2023A2 SPD30P06 -60V P-Channel MOSFET |
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