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SPD30P06 Datasheet(PDF) 8 Page - EVER SEMICONDUCTOR CO.,LIMITED |
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SPD30P06 Datasheet(HTML) 8 Page - EVER SEMICONDUCTOR CO.,LIMITED |
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8 / 9 page ![]() Avalanche energy EAS = f (Tj) para.: ID = -30 A , VDD = -25 V, RGS = 25 W 25 45 65 85 105 125 145 °C 185 Tj 0 20 40 60 80 100 120 140 160 180 200 220 mJ 260 Typ. gate charge VGS = f (QGate) parameter: ID = -30 A pulsed 0 10 20 30 40 nC 55 QGate 0 -2 -4 -6 -8 -10 -12 V -16 SPD30P06P DS max V 0,8 DS max V 0,2 Drain-source breakdown voltage V(BR)DSS = f (Tj) -60 -20 20 60 100 140 °C 200 Tj -54 -56 -58 -60 -62 -64 -66 -68 V -72 SPD30P06P 8 Rev:2023A2 SPD30P06 -60V P-Channel MOSFET |
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