SPD30P06 datasheet(6/9 Pages) EVVOSEMI

Part #	SPD30P06

Description	-60V P-Channel MOSFET

PDF	9 Pages

Scroll/Zoom	100%

Manufacturer	EVVOSEMI [EVER SEMICONDUCTOR CO.,LIMITED]

Direct Link	https://www.evvosemi.com

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6 / 9 page

Typ. drain-source-on-resistance

RDS(on) = f (ID)

parameter: VGS

-10

-20

-30

-40

-60

0.00

0.02

0.04

0.06

0.08

0.10

0.12

0.14

0.16

0.18

0.20

0.22

0.26

SPD30P06P

VGS [V] =

-5.0

-5.5

-6.0

-6.5

-7.0

-7.5

-8.0

-9.0

-10.0

Typ. output characteristic

ID = f (VDS); Tj=25°C

parameter: tp = 80 µs

-2

-4

-6

-8

-10

-13

VDS

-5

-10

-15

-20

-25

-30

-35

-40

-45

-50

-55

-60

-75

SPD30P06P

VGS [V]

-4.0

-4.5

-5.0

-5.5

-6.0

-6.5

-7.0

-7.5

-8.0

-9.0

Ptot = 125.00W

-10.0

Typ. transfer characteristics ID= f ( VGS )

VDS³ 2 x ID x RDS(on)max

parameter: tp = 80 µs

-1

-2

-3

-4

-5

-6

-7

-8

-10

VGS

-10

-20

-30

-40

-60

Typ. forward transconductance

gfs = f(ID); Tj=25°C

parameter: gfs

-1

-2

-3

-4

-5

-6

-7

-8

-10

Rev:2023A2

SPD30P06

-60V P-Channel MOSFET

SPD30P06 Datasheet(PDF) 6 Page - EVER SEMICONDUCTOR CO.,LIMITED

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