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SPD30P06 Datasheet(PDF) 4 Page - EVER SEMICONDUCTOR CO.,LIMITED

Part # SPD30P06
Description  -60V P-Channel MOSFET
PDF  9 Pages
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Manufacturer  EVVOSEMI [EVER SEMICONDUCTOR CO.,LIMITED]
Direct Link  https://www.evvosemi.com
Logo EVVOSEMI - EVER SEMICONDUCTOR CO.,LIMITED

SPD30P06 Datasheet(HTML) 4 Page - EVER SEMICONDUCTOR CO.,LIMITED

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Electrical Characteristics,at T j = 25 °C, unless
Unit
Values
Symbol
Parameter
min.
typ.
max.
Qgs
3.7
5.6
nC
Qgd
13.8
20.7
Dynamic Characteristics
Gate to source charge
VDD = -48 V, ID = -30 A
Gate to drain charge
VDD = -48 V, ID = -30 A
Gate charge total
Qg
48
VDD = -48 V, ID = -30 A, VGS = 0 to -10 V
32
Gate plateau voltage
VDD = -48 V , ID = -30 A
V(plateau)
-5.2
V
Parameter
Symbol
Values
Unit
min.
typ.
max.
Reverse Diode
Inverse diode continuous forward current
TC = 25 °C
IS
-30
A
Inverse diode direct current,pulsed
TC = 25 °C
ISM
-120
Inverse diode forward voltage
VGS = 0 V, IF = -30
VSD
-1.3
-1.7
V
Reverse recovery time
VR = -30 V, IF=IS , diF/dt = 100 A/µs
trr
64.6
97
ns
Reverse recovery charge
VR = -30 V, IF=lS , diF/dt = 100 A/µs
Qrr
153
230
nC
4
Rev:2023A2
SPD30P06
-60V P-Channel MOSFET



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