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SPD30P06 Datasheet(PDF) 1 Page - EVER SEMICONDUCTOR CO.,LIMITED |
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SPD30P06 Datasheet(HTML) 1 Page - EVER SEMICONDUCTOR CO.,LIMITED |
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1 / 9 page  Features · P-Channel · Enhancement mode · Avalanche rated · dv/dt rated · 175°C operating temperature Product Summary Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit -30 -21.5 ID ID puls -120 EAS 250 mJ Continuous drain current A TC = 25 °C TC = 100 °C Pulsed drain current TC = 25 °C Avalanche energy, single pulse ID = -30 A , VDD = -25 V, RGS = 25 W Avalanche energy, periodic limited by Tjmax EAR 12.5 Reverse diode dv/dt dv/dt 6 IS = -30 A, VDS = -48 V, di/dt = 200 A/µs, Tjmax = 175 °C kV/µs Gate source voltage VGS ±20 V Power dissipation TC = 25 °C Ptot 125 W Operating and storage temperature Tj , Tstg -55+175 °C IEC climatic category; DIN IEC 68-1 55/175/56 Rev:2023A2 1 G D S SPD30P06 -60V P-Channel MOSFET mJ W RDS(on)=75 mW VDS (V) = -60V ID = -30A (VGS = -10V) (VGS = -10V) · · · |
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