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SPD30P06 Datasheet(PDF) 5 Page - EVER SEMICONDUCTOR CO.,LIMITED |
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SPD30P06 Datasheet(HTML) 5 Page - EVER SEMICONDUCTOR CO.,LIMITED |
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5 / 9 page ![]() Drain current ID = f (TC) parameter: VGS³ 10 V 0 20 40 60 80 100 120 140 160°C 190 TC 0 -4 -8 -12 -16 -20 -24 A -32 SPD30P06P Power dissipation Ptot = f (TC) 0 20 40 60 80 100 120 140 160°C 190 TC 0 10 20 30 40 50 60 70 80 90 100 110 120 W 140 SPD30P06P Transient thermal impedance ZthJC = f (tp) parameter : D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 K/W SPD30P06P single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50 Safe operating area ID = f ( VDS ) parameter : D = 0 , TC = 25 °C -10 -1 -10 0 -10 1 V -10 2 VDS 0 -10 1 -10 2 -10 3 -10 A SPD30P06P DC 10 ms 1 ms 100 µs t p = 31.0µs 5 Rev:2023A2 SPD30P06 -60V P-Channel MOSFET |
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