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SPD30P06 Datasheet(PDF) 7 Page - EVER SEMICONDUCTOR CO.,LIMITED

Part # SPD30P06
Description  -60V P-Channel MOSFET
PDF  9 Pages
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Manufacturer  EVVOSEMI [EVER SEMICONDUCTOR CO.,LIMITED]
Direct Link  https://www.evvosemi.com
Logo EVVOSEMI - EVER SEMICONDUCTOR CO.,LIMITED

SPD30P06 Datasheet(HTML) 7 Page - EVER SEMICONDUCTOR CO.,LIMITED

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Drain-source on-state resistance
RDS(on) = f (Tj)
parameter : ID = -21.5 A, VGS = -10 V
-60
-20
20
60
100
140
°C
200
Tj
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
0.18
0.20
W
0.24
SPD30P06P
typ
98%
Gate threshold voltage
VGS(th) = f (Tj)
parameter: VGS = VDS, ID = -1.7 mA
-60
-20
20
60
100
°C
180
Tj
0.0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
-3.5
-4.0
V
-5.0
98%
-60
-20
20
60
100
°C
180
Tj
0.0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
-3.5
-4.0
V
-5.0
typ
-60
-20
20
60
100
°C
180
Tj
0.0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
-3.5
-4.0
V
-5.0
2%
-60
-20
20
60
100
°C
180
Tj
0.0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
-3.5
-4.0
V
-5.0
Typ. capacitances
C = f (VDS)
parameter: VGS=0V, f=1 MHz
0
-5
-10
-15
-20
-25
V
-35
VDS
2
10
3
10
4
10
pF
Ciss
Coss
Crss
Forward characteristics of reverse diode
IF = f (VSD)
parameter: Tj , tp = 80 µs
0.0
-0.4
-0.8
-1.2
-1.6
-2.0
-2.4 V
-3.0
VSD
0
-10
1
-10
2
-10
3
-10
A
SPD30P06P
T
j = 25 °C typ
T
j = 25 °C (98%)
T
j = 175 °C typ
T
j = 175 °C (98%)
7
Rev:2023A2
SPD30P06
-60V P-Channel MOSFET



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