33486A datasheet(7/30 Pages) FREESCALE

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Analog Integrated Circuit Device Data

Freescale Semiconductor

33486A

DYNAMIC ELECTRICAL CHARACTERISTICS

Table 4. DYNAMIC ELECTRICAL CHARACTERISTICS

Characteristics noted under conditions 9.0 V ≤ VBAT ≤ 16 V, -40°C ≤ TJ ≤ 150°C, unless otherwise noted. Typical values noted

reflect the approximate parameter mean at TJ = 25°C under nominal conditions unless otherwise noted.

Characteristic

Symbol

Min

Typ

Max

Unit

OVERLOAD PROTECTION

High-Side Overcurrent Shutdown Delay (7)

tILIM

–

3.0

µs

Low-Side Over Load Detection (VOUT-GND) Shutdown Delay

(8)

tOUT-FAULT

–

3.0

µs

OUTPUT TIMING

High-/Low-Speed Mode to Low-/High-Speed Mode Transition Pulse Width

tSMOD

150

250

350

µs

Gate Low-Side Rise Time in High Speed Mode

From 10% to 90% VOUT, Load = 3.3 nF and 10 Ω

tPSRLS

–

3.6

–

µs

Gate Low-Side Fall Time in High Speed Mode

From 90% to 10% VOUT, Load = 3.3 nF and 10 Ω

tNSRLS

–

0.25

–

µs

HIGH-SPEED MODE

High-Side Positive Slew Rate

From 10% to 65% VOUT, Load = 3.0 Ω

tHR

–

µs

High-Side Negative Slew Rate

From 90% to 35% VOUT, Load = 3.0 Ω

tHF

–

µs

High-Side Turn-On Delay Time

To 10% VOUT, Load = 3.0 Ω

tHDON

–

2.5

–

µs

High-Side Turn-Off Delay Time

To 90% VOUT, Load = 3.0 Ω

tHDOFF

–

1.5

–

µs

LOW-SPEED MODE

High-Side Maximum Output Positive Slew Rate

From 10% to 65% VOUT, Load = 3.0 Ω

tLR

–

1.0

–

µs

High-Side Maximum Output Negative Slew Rate

From 90% to 35% VOUT, Load = 3.0 Ω

tLF

–

0.5

–

µs

High-Side Turn On Delay TIme

To 10% VOUT, Load = 3.0 Ω

tLDON

–

µs

High-Side Turn Off Delay Time

To 90% VOUT, Load = 3.0 Ω

tLOFF

–

µs

Notes

Time between fault occurrence and output shutdown.

Time between fault occurrence and gate low-side (GLS) shutdown.

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