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SA900 Datasheet(PDF) 9 Page - NXP Semiconductors |
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SA900 Datasheet(HTML) 9 Page - NXP Semiconductors |
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9 / 20 page ![]() Philips Semiconductors Preliminary specification SA900 I/Q transmit modulator 1997 Sept 16 9 AC ELECTRICAL CHARACTERISTICS (continued) SYMBOL PARAMETER TEST CONDITIONS LIMITS UNITS SYMBOL PARAMETER TEST CONDITIONS MIN TYP MAX UNITS DUALTX 3rd order -35 -42 dBc (cont.) Linearity (0dB VGA, I and Q inphase) 5th order -55 dBc 7th order -65 dBc Carrier suppression (I and Q quadrature) VGA = 0dB -35 -45 dBc Carrier suppression (I and Q quadrature) VGA = –40dB -28 -33 dBc Sideband suppression I and Q quadrature -35 -45 dBc 869 to 894MHz –104 dBm 824 to 849MHz –47 dBc Spurious output 2 to 824MHz –41 dBc 849 to 869MHz –41 dBc 894MHz to 8.49GHz –41 dBc TXLO and harmonics –21 dBc Broadband noise (0dB VGA) 869 to 894MHz –136 dBm/Hz Broadband noise (0dB VGA) 935 to 960MHz –136 dBm/Hz Adjacent channel noise power @30kHz –95 dBc/Hz Alternate channel noise power @60kHz –101 dBc/Hz Max frequency 0.8 21 MHz Q/Q Baseband quadrature differential input Differential modulation level 0.61 0.8 1.01 VP-P Differential input impedance 101 k Ω Max frequency 0.8 21 MHz I/I Baseband inphase differential input Differential modulation level 0.61 0.8 1.01 VP-P Differential input impedance 10 k Ω Buffered TXLO differential outputs (AC coupled) Frequency range 900 1040 MHz VSWR (single-ended) 2:1 LO_1/2 Output impedance single-ended 50 Ω _ Output impedance differential 100 Ω Output level single-ended, 50 Ω 50 90 mVP-P Out ut level differential, 100 Ω 100 180 mVP-P NOTES: 1. Guaranteed by design. 2. Needs a different matching component. Max test frequency is 850MHz with test circuit shown in Figure 11. FUNCTIONAL DESCRIPTION Dual Mode Operation The SA900 transmit modulator provides direct single sideband quadrature modulation of the difference of the TXLO and VCO frequencies, while providing quadrature LO signals for the I/Q modulator. The quadrature LO signals are modulated with high linearity by the baseband inphase (I) and quadrature (Q) signals. The summed modulator output produces the lower sideband, while rejecting the upper sideband. The I and Q inputs also provide DC biasing for the modulator inputs. The summed output of the modulator goes to a variable gain amplifier (VGA) to control the output level, it has 40.0dB of attenuation control range, with 0.63dB steps. The power control function is programmed by means of a 6-bit word (see Table 3). The VGA output drives the power amp output stage to provide +2dBm average minimum power level (at 0dB power control) into 50 Ω, in conjunction with external matching components on DUALTX. The AD (AMPS/DUAL) and the SE (synthesizer enable) bit control the power up/down of the DUAL mode function. The transition of the TXEN, from low to high turns on the modulator. The falling edge of the TXEN signal disables the synthesizer and modulator. The TXLO is a system supplied LO signal. The SA900 buffers the TXLO signal (LO_1/2) for use with the system synthesizer (such as the SA7025) to form the system LO synthesizer loop. The DUAL mode can also be used for AMPS operation. The AMPS and DUAL mode modulation is generated by the system DSP IC to provide the required I/Q baseband modulation for the SA900. The DUAL output provides low broadband noise output power (so that the receiver sensitivity is not degraded) and high linearity to meet cellular phone system needs. Table 1 provides the VGA power control limits. The SA900 DUALTX output is externally matched with either a shunt inductor to VCC and a series capacitor or a shunt inductor to VCC and a series inductor. This matches the DUALTX output to 50 Ω. Values of the matching components are dependent on PCB layout, typical values are shown in Figure 9. |
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