TMDS442 datasheet(9/45 Pages) TI

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TMDS442

SLLS757A – AUGUST 2006 – REVISED MARCH 2007

ELECTRICAL CHARACTERISTICS (continued)

over recommended operating conditions (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP(1)

MAX

UNIT

STATUS PINS (HPD_SINK, 5V_PWR)

VIH = 5.3 V

-150

150

IIH

High-level digital input current

µA

VIH = 2 V or VCC

-85

IIL

Low-level digital input current

VIL = GND or 0.8 V

-20

µA

STATUS PINS (HPD, 5V_SINK)

VOH

High-level output voltage

IOH = -4 mA

2.4

VCC

VOL

Low-level output voltage

IOL = 4 mA

GND

0.4

CONTROL PINS (LC_A0, LC_A1, GE, GPIO)

IIH

High-level digital input current

VIH = 2 V or VCC

-10

µA

IIL

Low-level digital input current

VIL = GND or 0.8 V

-10

µA

Input capacitance

VI = GND or VCC

DDC I/O PINS (SCL_SINK, SDA_SINK)

VI = 5.5 V

-50

Ilkg

Input leakage current

µA

VI = VCC

-10

IOH

High-level output current

VO = 3.6 V

-10

µA

IIL

Low-level input current

VIL = GND

-40

µA

OVS = NC

470

620

VOL

Low-level output voltage

IOL = 400 µA or 4 mA

OVS = GND

620

775

OVS = VCC

775

950

OVS = NC

Low-level input voltage below output

VOL-VILC

Ensured by design

OVS = GND

240

low-level voltage level

OVS = VCC

420

VI = 5.0 V or 0 V, Freq = 100 kHz

CIO

Input/output capacitance

VI = 3.0 V or 0 V, Freq = 100 kHz

DDC I/O PINS (SCL, SDA) AND LOCAL I2C PINS (LC_SCL, LC_SDA)

VI = 5.5 V

-50

Ilkg

Input leakage current

µA

VI = VCC

-10

IOH

High-level output current

VO = 3.6 V

-10

µA

IIL

Low-level input current

VIL = GND

-10

µA

VOL

Low-level output voltage

IOL = 4 mA

0.2

VI = 5.0 V or 0 V, Freq = 100 kHz

Input capacitance

VI = 3.0 V or 0 V, Freq = 100 kHz

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