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MB95F104AJS Datasheet(PDF) 65 Page - fujitsu semiconductor |
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MB95F104AJS Datasheet(HTML) 65 Page - fujitsu semiconductor |
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65 / 72 page ![]() MB95100AM Series 65 6. Flash Memory Program/Erase Characteristics *1 : TA = + 25 °C, VCC = 5.0 V, 10000 cycles *2 : TA = + 85 °C, VCC = 4.5 V, 10000 cycles *3 : This value comes from the technology qualification (using Arrhenius equation to translate high temperature measurements into normalized value at +85 °C) . Parameter Value Unit Remarks Min Typ Max Sector erase time (4 Kbytes sector) ⎯ 0.2*1 0.5*2 s Excludes 00H programming prior erasure. Sector erase time (16 Kbytes sector) ⎯ 0.5*1 7.5*2 s Excludes 00H programming prior erasure. Byte programming time ⎯ 32 3,600 µs Excludes system-level overhead. Erase/program cycle 10000 ⎯⎯ cycle Power supply voltage at erase/ program 4.5 ⎯ 5.5 V Flash memory data retention time 20*3 ⎯⎯ year Average TA = +85 °C |
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