MIC4600

DS20005584B-page 4

 2016-2020 Microchip Technology Inc.

EN Input Bias Current

—

—

2

µA

VEN = 12V

Fault

Fault Overtemperature

—

150

—

°C

TJ rising

Overtemperature Hysteresis

—

23

—

°C

—

FAULT Logic Level Low

—

0.125

0.2

VIFAULT = 5 mA

FAULT Pin Leakage Current

—

0.01

0.1

µA

VFAULT = 5.5V

Input Control

HSI Logic Level High

1.4

——

V

—

HSI Logic Level Low

—

—

0.65

V—

HSI Bias Current

—

0.01

0.1

µA

VHSI = 5V

LSI Logic Level High

1.4

——

V

—

LSI Logic Level Low

—

—

0.65

V—

LSI Bias Current

—

0.01

0.1

µA

VLSI = 5V

Timing

Dead Time

—

18.7

—

ns

RDELAY = 105 kΩ

Switching Frequency Range

—

—

1.5

MHz

—

Minimum Allowable Pulse

Width

—32

—

ns

—

Rise Time (DH, DL)

tr

—15

—

ns

CLOAD = 3 nF, 10%VDD to 90%VDD

Fall Time (DH,DL)

tf

—13.5

—

ns

CLOAD = 3 nF, 10%VDD to 90%VDD

Propagation Delay,

Rising HSI to DH

—

26

—

ns

GND to 10%xVDD

Propagation Delay,

Rising LSI to DL

—

18

—

ns

GND to 10%xVDD

Propagation Delay,

Falling HSI to DH

—55

—

ns

VDD to 90%xVDD

Propagation Delay,

Falling LSI to DL

—14

—

ns

VDD to 90%xVDD

MOSFET Drivers

DH RDS(ON), High

—

2

3

Ω

IDH = 20 mA

DH RDS(ON), Low

—

1.5

3

Ω

IDH = –20 mA

DL RDS(ON), High

—

2

3

Ω

IDL = 20 mA

DL RDS(ON), Low

—

1

2

Ω

IDL = –20 mA

ELECTRICAL CHARACTERISTICS (CONTINUED)

Electrical Characteristics: VIN = VEN = 12V, VBST – VSW = 5V; TA = +25°C, CVIN = CVDD = 1 μF unless noted. Bold

values indicate –40°C ≤ TJ ≤ +125°C. Specification for packaged product only.

Parameter

Sym.

Min.

Typ.

Max.

Units

Conditions

Note 1: Specified for packaged product only.